IMPLEMENTATION OF THRESHOLD LOGIC GATES USING RTDS

Khalid M.¹*, Siddiqui M.J.², Rahman S.A.³, Singh J.K.^4
1Department of Electronics Engineering, Zakir Husain College of Engineering and Technology, AMU, Aligarh, India
²Department of Electronics Engineering, Zakir Husain College of Engineering and Technology, AMU, Aligarh, India
³Department of Electronics Engineering, Zakir Husain College of Engineering and Technology, AMU, Aligarh, India
⁴Department of Electronics Engineering, Zakir Husain College of Engineering and Technology, AMU, Aligarh, India
* Corresponding Author : mkhalid8406@gmail.com

Received : -     Accepted : -     Published : 21-12-2010
Volume : 1     Issue : 2       Pages : 13 - 17
J Electron Electr Eng 1.2 (2010):13-17

In this paper, Threshold logic gates (TLG) are implemented using Resonant Tunneling Diodes (RTD). TLG is conceptually similar to the early McCulloch-Pitts model of the neuron and is normally used to implement linearly separable binary functions. RTD has demonstrably promising electronic features due to its high speed switching capability and functional versatility. Great circuit functionality can be achieved through integrating field-effect transistors (FET) in conjunction with Resonant Tunneling Diodes to modulate effective negative differential resistance (NDR) of the RTD. RTDs are intrinsically suitable for implementing threshold logic rather than Boolean logic, which has dominated CMOS technology in the past. The basic functional unit in the proposed implementation is the monostable-bistable transition logic element (MOBILE). Commonly used logic functions like the OR, AND, and MAJORITY function have been implemented and tested through SPICE simulation.

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